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Srini Krishnamurthy
Principal Scientist
Applied Optics Laboratory
Physical Sciences Division
Phone: 650-859-4997
Fax: 650-859-5036
Email: srini@aristotle.sri.com
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Specialized Professional Competence
- Nonlinear absorption and light propagation
- I-V Modeling of HgCdTe IR diodes
- Spin relaxation in Semicondutors
- Modeling Avalanche Photo Diodes
- Dielectric breakdown in semiconductors
- Magnetic susceptibility in pyrolytic carbon and nanotubes
- Photonic Band Gap (PBG) devices
- Acousto-optic interaction in Photonic materials
- Non-linear and high-field carrier transport in sub-micron devices.
- Avalanche Photo Diodes
- Tunneling studies and device characteristics of nanoelectron devices.
- Optical studies in semiconductors.
- Modeling MBE growth.
- Empirical bands of semiconductor compounds, alloys, and superlattices.
- First principles bands and molecular dynamics calculations.
Research Projects
- Magnetic properties of semiconductors
- Spin relaxation in GaAs and GaN compounds
- Para and diamagnetic susceptibility of pyrolytic carbon and nanotubes
- Impact ionization in semicondutors
- Designs for increased signal-to-noise ratio
- Designs for increased dielectric breakdown voltage
- PBG structures for Optical Switch and DWDM applications
- Optical properties of semiconductors
- Prediction of band gap variation with temperature.
- --electron-phonon interactions in perturbative method.
- Absorption in semiconductor alloys
- --one photon, two-photon, free-carrier absorption
- Power Devices
- v-E characateristics under high fields
- Impact Ionization coefficients
- Break down voltages
- Resonant tunneling devices (RTD) for nanoelectronics.
- --Efficient difference equation approach to transport in RTDs.
- --New Green's function method with first principles bands.
- Materials choice for ballistic and drift transport devices.
- --Fast eigenvalue method to get solution to Boltzmann Transport Equation.
- Auger lifetimes in semiconductor compounds and alloys.
- --electron-hole interactions
- Surface atom interactions and MBE growth modeling.
- --Green's function method to growth modeling.
- Molecular dynamics simulation of SiGeC alloys.
- --Tight-binding band structures
Other Professional Experience
- Humboldt Fellow at Paul Drude Institute fuer Festkoerperelectronik, Berlin, Germany (2001)
- Visiting faculty of physics at Indian Institute of Technology, Madras, India (1997)
- Consultant, United Nations Development Programme (1993)
- Humboldt Fellow at Max Planck Institute fur festkorperforchung, Stuttgart, Germany. (1992)
- Summer research fellowship, by University research council, Cincinnati. (1983)
Academic Background
-
B. Sc. Ed. (1978), Physics and Mathematics, Regional
College of Education, Mysore, India.
-
M. Sc. Ed. (1980), Physics, Regional College of
Education, Mysore, India.
-
Ph.D. (1984), Physics, University of Cincinnati,
Ohio.
Professional Honors
Membership
Publications:
This material may be protected by copyright law (Title 17 U.S. Code). For other than Fair Use (as described in section 107 of the code) the user should contact the publisher for permission to use the material.
Refereed
74. N.
Kamaraju, S. Kumar, A. Sood, S. Guha and S.
Krishnamurthy
Large nonlinear absorption
and refraction coefficients of carbon
nanotubes estimated
from
femtosecond Z-scan experiments
Applied
Physics Letters, (accepted,
2007)
73. S. Krishnamurthy, Z.G. Yu, L.P. Gonzalez,
and
Shekhar Guha
Accurate evaluation of nonlinear absorption
coefficients
for light
propagation
in InAs, InSb, and HgCdTe alloys
Journal
of Applied Physics,
101, 113104 (2007)
72. N. Newman, H.X. Liu, J. Medvedeva, Lin
Gu, R.K.
Singh, Z,G. Yu,
S. Krishnamurthy, D.J. Smith, A.J.
Freeman, and M. van Schilfgaarde
Recent progress
towards the development of
ferromagnetic
nitride
semiconductors for spintronic
applications
Physica
Status Solidi (a) (Accepted) (2006).
71. S. Krishnamurthy,
Z.G. Yu, L.P.
Gonzalez, and Shekhar Guha
High intensity Light propagation in
InAs
Applied
Physics Letters 89,
161108 (2006).
70. Z.G. Yu, S. Krishnamurthy, and S. Guha
Photoexcited-carrier-induced
refractive-index
change
in small-gap
semiconductors
Journal
of Optical Society of America B 23,
2356, (2006).
69. S.
Guha, L.P. Gonzalez, J. Barnes, and S. Krishnamurthy
Optical nonlinearities and charge-carrier
lifetimes
in semiconductors:
Experiment and
Theory.
MSS-Workshop
(Proceedings of IRIS conference(2006).
68. S.
Krishnamurthy, M.A. Berding, H. Robinson, and Z.G. Yu
Tunneling in LWIR HgCdTe
photodiodes
Journal
of Electronic Materials 35, 1399 (2006).
67. S.
Krishnamurthy, M.A. Berding, and Z.G. Yu
Minority carrier lifetimes in HgCdTe
Alloys
Journal
of Electronic Materials 35, 1369 (2006).
66. Z.G. Yu, M.A. Berding, and S.
krishnamurthy
Spin transport in organics and organics
spin
devices
IEE
Proc.-Circuits Device Systems 152,
334, (2005).
65. K.
Moazzami, J. Phillips, D. Lee, S. Krishnamurthy, G. Benoit, and Y. Fink
Detailed study of above bandgap optical
absorption
in MBE HgCdTe
Journal
of Electronic Materials34, 773 (2005).
64. S.
Krishnamurthy, Z.G. Yu, C.H. Swartz, T.H. Myers, and D.D. Edwall
Minority carrier lifetimes in p-doped MWIR
HgCdTe
alloys
MSS-Workshop
(Proceedings of IRIS conference)(2005).
63. S.
Krishnamurthy, M.A. Berding, Z.G. Yu, C.H. Swartz, T.H. Myers, D.D.
Edwall
and R. De Wames
Model for minority carrier lifetimes in
doped
HgCdTe
Journal
of Electronic Materials34, 873 (2005).
62. M.A. Berding, S. Krishnamurthy, A.-B.
Chen, C.H.
Swartz, T.H. Myers, D.D. Edwall
and R. De Wames
SRH lifetimes in HgCdTe
MSS-Workshop
(Proceedings of IRIS conference)(2004).
61. Z.G. Yu, S. Krishnamurthy,
M. van Schilfgaarde, and N. newman
Spin relaxation of
electrons and holes in zinc-blende semiconductors.
Physical
Review B 71,
245312 (2005).
60. Z.G. Yu, M.A. Berding, and S.
Krishnamurthy
Spin drift, spin
precession, and the magnetoresistance of noncollinear
magnet-polymer-magnet
structures,
Physical
Review B (Rapid Communication),
71, 060408 (2005).
59. Z.G.
Yu, M.A.
Berding and S. Krishnamurthy
Organic
magnetic field effect transistors and
ultrasensitive magnetometer
Journal of
Applied Physics,97, 024510
(2005).
58. S.
Krishnamurthy and
Paulo Santos
Large optical modulation
by SAW in photonic band gap structures
Journal
of Applied Physics, 96(4), 1803 (2004).
57. M.M. de Lima Jr, P.V. Santos, R.
Hey, and S.
Krishnamurthy
Modulation
of Photonic
Crystals by Surface Acoustic Waves
Physica E
(Amsterdam), 21, 809
(2004)
56. C.H. Swartz, R.P. Tompkins, N.C.
Giles, T.H.
Myers, D.D. Edeall, J. Ellsworth, E. Piquette,
J. Arias, M. Berding, S. Krishnamurthy, I.
Vurgaftman, and J.R.
Meyer
Fundamental materials
studies of undoped, In-doped, and As-doped HgCdTe.
Journal
of Electronic Materisls, 33,
728 (2003).
55. S. Krishnamurthy, N. Newman, and M.
van
Schilfgaarde
Electron spin lifetimes
in GaAs and GaN
Applied
Physics Letters, 83(9),
1761 (2003).
54. S. Krishnamurthy and Paulo Santos
High contrast optical
modulation with surface acoustic waves
Applied
Physics Letters, 83(13),
1095, (2003).
LANL-archive: physics/0304094
53. S. Guha, A. Zakel, J.L. Blakeshire, and S.
Krishnamurthy
Intensity and temperature
dependence of the charge carrier lifetimes in bulk HgCdTe
alloy
Applied
Physics Letters
83(1), 78 (2003).
52. S. Krishnamurthy and M.A. Berding
Full bandstructure
calculation of SRH lifetimes in InAs
Journal of
Applied Physics ,
90(3), 828 (2001)
51. Shekhar Guha, J.L. Blackshire, A. Zakel,
and S.
Krishnamurthy
Measurement of
charge carrier decay rates in
InAs and HCT wafers
Proceedings of
SPIE (San Jose, 2001).
50. S. Krishnamurthy, K. Nashold, and A.
Sher,
Enhanced
Breakdown Voltage in ultra-thin
semiconductors
(Unpublished)
49. S. Krishnamurthy and A. Sher,
Two Photon absorption in
nitride compounds and alloys
Applied
Physics Letters 77(3), 355
(2000)
48. S. Krishnamurthy, A.-B. Chen, and A.
Sher,
Below bandgap optical
absorption in semiconductor alloys,
Journal of
Applied Physics 88(1),
260 (2000).
47. S. Krishnamurthy and T. Casselman,
A detailed
Calculation of Auger lifetime in
p-type HgCdTe,
Journal of
Electronic Materials,
29(6), 848 (2000).
46. S. Krishnamurthy, M. van Schilfgaarde,
A.-B.
Chen, M.A. berding, and A. Sher,
Direct gap in Ordered
Silocn
Carbon Alloys,
Applied Physics
Letters 75(20) 3153
(1999).
45. S. Krishnamurthy, A.-B. Chen, and A.
Sher,
I-V
Characteristics of
Resonant Tunneling Devices: Difference Equation Method,
Journal of
Applied Physics, 84(9)
5037 (1998).
44. S. Krishnamurthy, A.-B. Chen, and A.
Sher,
Alignment
of Two-Valley Resonance
Levels and I-V Characteristics of GaAs/AlAs
ResonantTunneling Diodes,
Journal of Applied
Physics- Communications,
84(9) 5354 (1998).Applied
Physics
43. V. Subramanian, A. Subrahmanyam, and S.
Krishnamurthy,
Intensity-dependent
Minority carrier lifetimes
in silicon solar cells,
(Unpublished) (1998)
42. Biao Li, Yongsheng Gui, Hongjuan Ye, Junhao
Chu and
S. Krishnamurthy,
Logarithmic
approximation
for energy band in non-parabolic semiconductors,
Journal of
Applied Physics, 83,
7668 (1998).
41. S. Krishnamurthy, A.-B. Chen, and A.
Sher,
Full bandstructure
calculation of Minority
carrier lifetimes in HgCdTe and Thallium-based
alloys,
Journal of
Electronic Materials,
27(6), 694 (1998).
40. S. Krishnamurthy, A.-B. Chen, and A.
Sher,
Accurate
calculation of
Auger rates in infrared materials,
Journal of Applied
Physics,82, 5540
(1997).Applied Physics
39. S. Krishnamurthy, M. van Schilfgaarde,
A.-B.
Chen, and A. Sher,
Bandstructure
effect on
high-field transport in GaN and GaAlN,
Applied Physics
Letters, 71(14) 1999
(1997).
38. S. Krishnamurthy, A.-B. Chen, and A.
Sher,
Electronic structure,
absorption coefficient,
and Auger rate in HgCdTe and Thallium-based
alloys,
Journal of
Electronic Materials,
26(6), 570 (1997).
37. S. Krishnamurthy, A.-B. Chen, and A.
Sher,
Near
band edge absorption
spectra of narrow gap III-V semiconductor alloys,
Journal of Applied
Physics, 80, 4045
(1996).
36. V. Ariel, V. Garber, G. Bahir, S.
Krishnamurthy,
and A. Sher,
Monitoring
HgCdTe layer
uniformity by differential absorption technique,
Applied
Physics Letters, 69(13)
(1996).
35. S. Krishnamurthy, A.-B. Chen, and A.
Sher,
Comparision of HgTe growth
in (100), (110),
(111), and (211) orientations,
Journal of
Electronic Materials,
25, 1254 (1996).
34. A. Sher, M. van Schilfgaarde, S.
Krishnamurthy,
M.A. Berding, and A.-B. Chen,
Theoretical evaluation of
InTlP, InTlAs, and
InTlSb as long-wave infrared detectors,
Journal of
Electronic Materials
, 24 (9), 1119 (1995).
33. S. Krishnamurthy, A.-B. Chen, and A.
Sher,
Temperature dependence of
band gaps in HgCdTe
and other semiconductors,
Journal of
Electronic Materials, 24
(9), 1121 (1995).
32. M. van schilfgaarde, A. Sher, S.
Krishnamurthy,
and A. B. Chen,
InTlP an infrared
material,
Applied
Physics letters, 53, 1853
(1995)
31. S. Krishnamurthy and A. Sher,
Electron
mobility in
Hg0.78Cd0.22Te alloy,
Journal of
Applied Physics, 75,
7904 (1994)
30. S. Krishnamurthy
and A. Sher,
Transport studies in
narrow-gap semiconductors
revisited,
Journal of
Electronic Materials,24,
641 (1994).
29. S. Krishnamurthy and M. Cardona,
Self-consistent
calculation of intervalley deformation potentials in GaAs and
Ge,
Journal of
Applied Physics-communications,
74, 2117 (1993).
28. S. Krishnamurthy, M.A. Berding, A. Sher
and
A.-B. Chen,
Surface energies and
order-state: effects on
semiconductor growth,
Computer Aided
innovation of materials
(Eds. Doyama el al) (North-Holland) p. 681 (1991).
27. S. Krishnamurthy, M.A. Berding, A. Sher
and
A.-B. Chen,
Energetics
of Molecular
beam epitaxy models,
Journal
Applied Physics, 68(8),
4020 (1990).
26. S. Krishnamurthy, M.A. Berding, A. Sher
and
A.-B. Chen,
Epitaxially grown
semiconductor
surfaces,
Journal of
Crystal Growth, 109, 88
(1991)
25. M.A. Berding, S. Krishnamurthy, A. Sher
and
A.-B. Chen,
Cleavage
energies of
Semiconductors,
J. Appl. Phys.
67, 6175
(1990)
24. M.A. Berding, S. Krishnamurthy, A. Sher
and
A.-B. Chen,
Surface energies for
MBE growth of HgTe and
CdTe,
Journal Vaccum
Science and Technology,
B9(3), 1858 (1991).
23. A.-B. Chen, Y.M. Lai-Hsu, S. Krishnamurthy,
M.A.
Berding, and A. Sher,
Band structures of
HgCdTe and HgZnTe alloys and
superlattices,
Semiconductor
Science and Technology,
5, S100, 1990.
22. A. Sher, S. Krishnamurthy, A.-B. Chen,
Transport in
submicron devices,
Proceedings of 14th
International conference on
microlithography and microcircuit Engineering ,
Vienna (Austria),
September 20-22, 1988;
Microelectronic
Engineering, 9, 377
(1989)
21. S. Krishnamurthy and M. van
Schilfgaarde,
Eigenvalue solution
to steady state Boltzmann
equation,
Computational
Electronics, (Kluwer
Academic, Boston) Eds. Hess, Leburton, and Ravaioli,
pp 119, (1990)
20. S. Krishnamurthy, M.A. Berding, A. Sher
and
A.-B. Chen,
Semiconductor surface
sublimation energy:
atom-atom interactions,
Physical Review
Letters, 64 (21),
2531 (1990)
19. S. Krishnamurthy, M.A. Berding, A. Sher
and
A.-B. Chen,
Surface
roughness theory and low temperature epitaxy,
Mater. Res. Soc.
Symp. Proc. ,
(1989)
18. S. Krishnamurthy, A. Sher and A.-B. Chen,
Solution to Boltzmann
equation: an eigen value
method,
Applied Physics Letters, 55
(10), 1002 (1989)
17. M.A. Berding, S. Krishnamurthy, A.
Sher and
A.-B. Chen,
Ballistic transport
in II-VI semiconductor
compounds and alloys,
Journal of Crystal
Growth, 86, 33
(1988).
16. S. Krishnamurthy, A. Sher and A.-B.
Chen,
Deformation potential and intervalley
scattering: Hot electron
transistor analysis,
Applied Physics
Letters, 53(19),
1853 (1988)
15. S. Krishnamurthy, A. Sher and A.-B. Chen,
Semiconductor
alloys for
fast thermal sensors,
Journal of Applied
Physics, 64
(3)},1530 (1988);
This has appeared also in Business Intelligence
Program DATALOG,
D88-1271, September 1988.
DATALOG is a publication of SRI
International, Menlo Park,
California (USA).
14. S. Krishnamurthy, M.A. Berding, A. Sher and
A.-B.
Chen,
Ballistic
transport in
semiconductor alloys,
Journal of Applied
Physics, 63 (9)},
4540 (1988).
13. S. Krishnamurthy, M.A. Berding, A. Sher and
A.-B.
Chen,
Systematics of
chemical and structural disorder
on band edge properties of semiconductor
alloys,
Physical Review
B 37, 4254 (1988).
12. S. Krishnamurthy, A. Sher and A.-B. Chen,
Material choice for
ballistic transport: Group
velocities and mean free path calculated
from realistic
bandstructures,
Applied Physics
Letters, 52 (6), 468
(1988).
11. A. Sher, MA. Berding, S. Krishnamurthy, M.
van
Schilfgaarde, A.-B. Chen and W. Chen,
Structure-property
relationships in
semiconductor alloys,
Material Research
Society symposium on
Infra-Red detectors, 1987.
10. M.A. Berding, S. Krishnamurthy, A. Sher and
A.-B.
Chen,
Electronic transport
properties of HgCdTe and
HgZnTe,
Journal of Vacuum
Science and Technology,
A5, 3014 (1987).
9. S. Krishnamurthy, A. Sher and A.-B.
Chen,
Semiconductor alloys for
high speed device
electronics",
First International SAMPE
electronics
conference, 318 (1987).
8. A.-B. Chen, M. van Schilfgaarde, S. Krishnamurthy, M.A.
Berding and A.
Sher,
Alloy electronic structure
statistics",
Seventh International
conference on Ternary and
multinary compounds, 377 (1987).
7. S. Krishnamurthy, A. Sher and A.-B.
Chen,
Velocity-field
characteristics of III-V semiconductor alloys: Band structure influences
Journal of Applied Physics,
62 (4),
1475 (1987).
6. S. Krishnamurthy, A. Sher and A.-B.
Chen,
Band structure of Six
Ge1-x alloys,
Physical Review,
B 33, 1026
(1986).
5. S. Krishnamurthy, A. Sher and
A.-B.
Chen,
Generalized
Brooks formula and electron mobility in Six Ge1-x
alloys,
Applied Physics Letters,
47 (2), 160
(1985).
4. S. Krishnamurthy, A. Sher and
A.-B.
Chen,
Binding energy and spectral
width of Si 2P core
excitons in Six Ge1-x alloys",
Physical Review
Letters,55(3), 320
(1985).
3. S. Krishnamurthy and J.A.
Moriarty,
Electronic structure and
impurity-limited
electron mobility of silicon superlattices,
Physical Review B32,
1027
(1985).
2. S. Krishnamurthy and J.A.
Moriarty,
Electronic structure of
silicon
superlattices.
Superlattices
and
Microstructures,1 (3), 209 (1985).
1. J.A. Moriarty
and S. Krishnamurthy,
Theory
of silicon
superlattices: Electronic structure and enhanced
mobility,
Journal Applied Physics,
54 (4), 1892 (1983).Applied Physics
Patent:
1. Paulo Santos and S.
Krishnamurthy
Acousto-Optical
switch and Frequency
Filter
European
Patent Office(EP1336892,
2002)
Conference
Proceedings:
1. M.A. Berding, S. Krishnamurthy, A.
Sher and
A.-B. Chen,
Energetics for vapor phase
growth
models,
Proc. IRIS conference,
Maryland
(1990)
2. M.A. Berding, S. Krishnamurthy, A.
Sher,
Surface energies for
MBE modeling of HgTe and
CdTe,
AIPConference
Proceedings,
235, 1858 (1991).
3. S. Krishnamurthy, and A. Sher,
Transport studies revisited,
Proc. IRIS
conference, Dallas.
(1994)
4. A. Sher, M. van Schilfgaarde, A.-B.
Chen, and
S. Krishnamurthy,
InTlP: A superior IRFPA
alloy,
Proc. IRIS
conference, Baltimore.
(1995)
5. S. Krishnamurthy, A.-B. Chen, and A.
Sher,
Modeling of growth of HgTe
in (100), (110),
(111), and (211) orientations,
Proc. IRIS
conference, Baltimore.
(1996)
6. A. Sher, M.A. Berding, S.
krishnamurthy, M. van
Schilfgaarde,
Alloys for
Infrared Applications
Anales de la
Asociation Quimica Agentina,
84(1) 23-30 (1996)
7. S. Krishnamurthy, A.-B. Chen, and A.
Sher,
Effect of donors on the
hole lifetimes in
infrared materials,
Proc. IRIS conference,
Baltimore.
(1997)
8. S. Krishnamurthy, A.-B. Chen, and A.
Sher,
Full bandstructure theory
for I-V
characteristics in resonant tunneling devices,
Physics of
Semiconductor devices, p. 865
(1997);
Proc. of 9th
International workshop on Physics
of semiconductor devices,
New Delhi, Dec 16-29,
1997.
9. A.
Sher, M. van
Schilfgaarde, M.A. Berding, S. Krishnamurthy, A.-B. Chen,
Computational
Materials Science: An
increasingly reliable engineering Tool.
Proceedings of
Materials Reseach Society,
Symposium G, Boston, Nov 30, 1998.
10. K. Nashold, S. Krishnamurthy, A.
Sher, A.-B.
Chen, and S. Guha,
Review of
optical limiter materials for
infrared laser protection,
Proceedings
of IRIS Conference, Boston
(1999) (Classified).
11. N. Newman, H.X. Liu, J. Medvedeva, Lin
Gu, R.K.
Singh, Z,G. Yu,
S. Krishnamurthy, D.J. Smith, A.J.
Freeman, and M. van Schilfgaarde
Development of dilute
magnetic semiconductors with Curie
temperatures
above 900K
International
Conference on spintronics (Japan)(Accepted)
(2006).
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