III-V Optoelectronic Foundry

SRI has a dedicated, in-house, III-V foundry for epitaxial growth and fabrication of InP, GaAs, and GaSb devices.

Crystal grower readies wafers for epitaxial growth
Crystal grower readies wafers for epitaxial growth

SRI's III-V fabrication facility includes Class 100, 1,000, and 10,000 cleanrooms for:

  • Optical contact photolithography
  • Diffusion
  • Rapid thermal processing
  • E-beam and thermal evaporation of a variety of metals
  • Plasma-enhanced chemical vapor deposition (PECVD) of dielectrics
  • Reactive ion etching (RIE)
  • Ion milling
  • Reactive ion beam etching (RIBE)
  • Chemically assisted ion beam etching (CAIBE)
  • Dielectric coating of laser facets
  • Holographic grating formation

In addition, the SRI facility maintains characterization tools to ensure high-quality epi-material, including:

  • Field emission scanning electron microscopy (SEM)
  • High-resolution X-ray diffraction (XRD) analysis to determine lattice constant and layer composition
  • Mapping photoluminescence to measure bandgap and material quality/uniformity
  • Hall measurements to establish doping densities and carrier mobilities
  • Electrochemical Capacitance-Voltage (ECV) profiling to measure carrier concentration versus depth

The facilities are often used in work performed by SRI's Applied Optics Laboratory, among other groups.