• Skip to primary navigation
  • Skip to main content
SRI logo
  • About
    • Press room
    • Our history
  • Expertise
    • Advanced imaging systems
    • Artificial intelligence
    • Biomedical R&D services
    • Biomedical sciences
    • Computer vision
    • Cyber & formal methods
    • Education and learning
    • Innovation strategy and policy
    • National security
    • Ocean & space
    • Quantum
    • QED-C
    • Robotics, sensors & devices
    • Speech & natural language
    • Video test & measurement
  • Ventures
  • NSIC
  • Careers
  • Contact
  • 日本支社
Search
Close

Epitaxial MOCVD Growth and III-V Wafer Processing Services

SRI provides tailored, customer-focused foundry services for epitaxial growth and fabrication of compound-semiconductor optoelectronic devices. Our dedicated III-V wafer foundry includes expertise and facilities for fabrication of custom devices.

High-quality epi-material is grown within a production-level metal-organic chemical vapor deposition (MOCVD) reactor configured for the InP, GaAs and GaSb material systems. This epitaxial-growth reactor has large wafer capacity (6 x 2-in. diameter, 3 x 3-in. diameter, 1 x 4-in. or 1 x 6-in. diameter), excellent uniformity, advanced in situ monitoring for improved reproducibility, and materials flexibility due to multiple sources and double dilution networks.

Capabilities

Our expert crystal growers have produced a large number of advanced III-V structures including:

• Low dark-current p-i-n detectors
• High power laser emitters
• Distributed feedback (DFB) lasers operating from 750 nm to 2100 nm
• Quantum cascade devices
• Low-threshold vertical-cavity surface-emitting lasers (VCSELs)
• Thermophotovoltaic cells
• We have also grown unique structures on silicon and other non III-V substrates.

In addition, the SRI facility maintains characterization tools to ensure high-quality epi-material including:

• Field emission scanning electron microscopy (SEM)
• High-resolution x-ray diffraction (XRD) analysis to determine lattice constant and layer composition
• Mapping photoluminescence to measure bandgap and material quality/uniformity
• Hall measurements to establish doping densities and carrier mobilities
• Electrochemical Capacitance-Voltage (ECV) profiling to measure carrier concentration versus depth

How can we help?

Once you hit send…

We’ll match your inquiry to the person who can best help you.

Expect a response within 48 hours.

Career call to action image

Make your own mark.

Search jobs

Our work

Case studies

Publications

Timeline of innovation

Areas of expertise

Institute

Leadership

Press room

Media inquiries

Compliance

Careers

Job listings

Contact

SRI Ventures

Our locations

Headquarters

333 Ravenswood Ave
Menlo Park, CA 94025 USA

+1 (650) 859-2000

Subscribe to our newsletter


日本支社
SRI International
  • Contact us
  • Privacy Policy
  • Cookies
  • DMCA
  • Copyright © 2022 SRI International