SRI’s III-V fabrication facility includes Class 100, 1,000, and 10,000 cleanrooms for:
- Optical contact photolithography
- Diffusion
- Rapid thermal processing
- E-beam and thermal evaporation of a variety of metals
- Plasma-enhanced chemical vapor deposition (PECVD) of dielectrics
- Reactive ion etching (RIE)
- Ion milling
- Reactive ion beam etching (RIBE)
- Chemically assisted ion beam etching (CAIBE)
- Dielectric coating of laser facets
- Holographic grating formation
In addition, the SRI facility maintains characterization tools to ensure high-quality epi-material, including:
- Field emission scanning electron microscopy (SEM)
- High-resolution X-ray diffraction (XRD) analysis to determine lattice constant and layer composition
- Mapping photoluminescence to measure bandgap and material quality/uniformity
- Hall measurements to establish doping densities and carrier mobilities
- Electrochemical Capacitance-Voltage (ECV) profiling to measure carrier concentration versus depth
The facilities are often used in work performed by SRI’s Applied Optics Laboratory, among other groups.