SRI’s III-V fabrication facility includes Class 100, 1,000, and 10,000 cleanrooms for:

• Optical contact photolithography
• Diffusion
• Rapid thermal processing
• E-beam and thermal evaporation of a variety of metals
• Plasma-enhanced chemical vapor deposition (PECVD) of dielectrics
• Reactive ion etching (RIE)
• Ion milling
• Reactive ion beam etching (RIBE)
• Chemically assisted ion beam etching (CAIBE)
• Dielectric coating of laser facets
• Holographic grating formation

In addition, the SRI facility maintains characterization tools to ensure high-quality epi-material, including:

• Field emission scanning electron microscopy (SEM)
• High-resolution X-ray diffraction (XRD) analysis to determine lattice constant and layer composition
• Mapping photoluminescence to measure bandgap and material quality/uniformity
• Hall measurements to establish doping densities and carrier mobilities
• Electrochemical Capacitance-Voltage (ECV) profiling to measure carrier concentration versus depth

The facilities are often used in work performed by SRI’s Applied Optics Laboratory, among other groups.