Citation
arXiv:0907.5239 [cond-mat.mtrl-sci] (or arXiv:0907.5239v2 [cond-mat.mtrl-sci] for this version) https://doi.org/10.48550/arXiv.0907.5239 Focus to learn more
Abstract
Graphene is formed on SiC(000-1) surfaces (the so-called C-face of the crystal) by annealing in vacuum, with the resulting films characterized by atomic force microscopy, Auger electron spectroscopy, scanning Auger microscopy and Raman spectroscopy. Morphology of these films is compared with the graphene films grown on SiC(0001) surfaces (the Si-face). Graphene forms a terraced morphology on the C-face, whereas it forms with a flatter morphology on the Si-face. It is argued that this difference occurs because of differing interface structures in the two cases. For certain SiC wafers, nanocrystalline graphite is found to form on top of the graphene.
