Self-stabilization in amorphous silicon circuits

Citation

Sambandan, S.; Street, R. A. Self-stabilization in amorphous silicon circuits. IEEE Electron Device Letters. 2009 January; 30 (1): 45-47.

Abstract

Thin film transistors (TFTs) based on disordered semiconductors such as amorphous hydrogenated silicon(a-Si:H) experience a threshold voltage shift (VT shift) with time in the presence of a gate bias. The VT shift needs to be compensated for in TFT circuits. We study an interesting property of self compensation in fundamental analog TFT circuits with one a part of the circuit compensating for the effects of VT shift in the other and vice-versa.

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