High-quality epi-material is grown within a production-level metal-organic chemical vapor deposition (MOCVD) reactor configured for the InP, GaAs, and GaSb material systems. This epitaxial growth reactor has large wafer capacity (6 x 2-in. diameter, 3 x 3-in. diameter, 1 x 4-in. diameter, or 1 x 6-in. diameter), excellent uniformity, advanced in situ monitoring for improved reproducibility, and materials flexibility due to multiple sources and double dilution networks. Available dopants include Si and Te for n-type and Zn and C for p-type.

SRI also offers in-situ wafer-scale Zn diffusion, epitaxial regrowth for device processing, growth on non III-V substrates, and many other unique capabilities.

SRI’s III-V fabrication facility includes Class 100; 1,000; and 10,000 cleanrooms for device fabrication. Our fabrication capabilities include:

• Lithography: Optical contact photolithography up to 150 mm wafers
• RTA: Rapid thermal processing up to 150 mm wafers
• Evaporation: E-beam and thermal evaporation of a variety of metals and dielectrics
• PECVD: Plasma-enhanced chemical vapor deposition of dielectrics
• RIE: Reactive ion etching of dielectrics
• Wet chemical etching: Semiconductor and dielectric wet etches

SRI also maintains access to nearby user facilities for additional capabilities, including:

• E-beam lithography
• ALD deposition
• Sputtering
• ICP etching

SRI maintains a suite of in-house material and device characterization tools, as well as access to user facilities for capabilities not listed here. Our capabilities include:

• XRD: High-resolution x-ray diffraction analysis to determine lattice constant and layer composition
• PL: Mapping photoluminescence to measure bandgap and material quality/uniformity
• Hall effect: Hall measurements to establish doping densities and carrier mobilities
• ECV: Electrochemical Capacitance-Voltage profiling to measure carrier concentration versus depth
• SEM: Field emission scanning electron microscopy to measure layer thickness and device topology
• Profilometry: Stylus profilometers for step height mapping
• Ellipsometry: Multi-angle spectroscopic ellipsometry for dielectric characterization
• Electrical: Probe-based electrical testing on-wafer and packaged
• Optical: Photocurrent measurements for on-chip devices and emission spectra for packaged devices

SRI also maintains access to nearby user facilities for additional capabilities, including:

• FIB
• AFM
• TEM
• EDS