Chemically modified ink-jet printed silver electrodes for organic field-effect transistors

Citation

Whiting, G. L.; Arias, A. C. Chemically modified ink-jet printed silver electrodes for organic field-effect transistors. Applied Physics Letters. 2009 December 21; 95 (25): 253302.

Abstract

Modification of ink-jet printed silver source and drain electrodes for organic field-effect transistors (FETs) with the electron acceptor 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) was investigated. Solution-based deposition of F4TCNQ onto ink-jet printed silver electrodes formed using either a nanoparticle-based or a metal organic decomposition ink, lead to a greater than tenfold improvement in FET mobility. Using these modified electrodes with the organic semiconductor 6,13-bis(triisopropylsilylethynyl) pentacene yields devices with a charge carrier mobility up to 0.9 cm2 V-1 s-1 and a current on/off ratio of 106.

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