Citation
Lucas, L. A., DeLongchamp, D. M., Vogel, B. M., Lin, E. K., Fasolka, M. J., Fischer, D. A., McCulloch, I., Heeney, M. & Jabbour, G. E. Combinatorial screening of the effect of temperature on the microstructure and mobility of a highperformance polythiophene semiconductor. Applied Physics Letters, 90, 012112, 2007.
Abstract
Using a gradient combinatorial approach, the authors report the effects of temperature on the microstructure and hole mobility of poly(2,5-bis(3-dodecylthiophen-2yl)thieno[3,2-b]thiophene) thin films for application in organic field-effect transistors. The gradient heating revealed a detailed dependence on thermal history. Optimal heat treatment achieved mobilities as high as 0.3cm2V1s1. Mobility enhancement coincides with an increase in crystal domain size and orientation, all of which occur abruptly at a temperature closely corresponding to a bulk liquid crystal phase transition.
