Structural and optical characterization of AlGaN multiple quantum wells grown on semipolar (20-21) bulk AlN substrate

Citation

Wunderer, T., Yang, Z., Feneberg, M., Batres, M., Teepe, M., & Johnson, N. (2017). Structural and optical characterization of AlGaN multiple quantum wells grown on semipolar (20-21) bulk AlN substrate. Applied Physics Letters, 111(11).

Abstract

Heterostructures of AlGaN with multiple quantum wells were grown by MOVPE on semipolar (20-21) bulk AlN substrates. Smooth epitaxial surfaces with excellent heterostructure interfaces were demonstrated. Luminescence from the AlGaN multiple quantum wells emitting at ? = 237nm show a substantial degree of polarization of about 35% as determined by low-temperature photoluminescence measurements.

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