Structural origin of gap states in semicrystalline polymers and the implications for charge transport

Citation

J. Rivnay, R. Noriega, J. E. Northrup, M. F. Toney, R. J. Kline, and A. Salleo , Structural origin of gap states in semicrystalline polymers and the implications for charge transport. Physical Review B. 2011 March 15; 83 (12): 121306.

Abstract

We quantify the degree of disorder in the – stacking direction of crystallites of a high performing semicrystalline semiconducting polymer. Using first principles calculations, we obtain the density of states of a system of – stacked polymer chains with increasing amounts of paracrystalline disorder. We find that for an aligned film of PBTTT the paracrystalline disorder is 7.3% — this induces a tail of trap states with a breadth of ~100 meV as determined through calculation. This finding agrees with previous device modeling and spectroscopic evidence, and provides physical justification for the mobility edge model.


Read more from SRI

  • Banner and attendees at the IEEE Hard Tech Venture Summit

    Cultivating hard tech startups that scale

    IEEE’s Hard Tech Venture Summit convened innovators at SRI to refine strategies and build new networks.

  • Patient going into a MRI

    Bringing surgical tools inside the MRI

    Drawing on SRI’s unique innovation ecosystem, the startup Medical Devices Corner is seeking to improve cancer surgery by advancing MRI-safe teleoperation.

  • Christopher Mims and Susan Patrick

    PARC Forum: How to AI

    The Wall Street Journal tech columnist Christopher Mims and SRI Education’s Susan Patrick discuss how AI can strengthen human agency.