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AlGaN-based ultraviolet lasers – applications and materials challenges
In this paper, recent progress in the development of ultraviolet laser diodes will be reviewed.
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Sub-300 nm UV LEDs with defect reduction layer and vertical-injection architecture
We present UV LEDs operating at wavelengths below 300 nm.
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Advances in group III-nitride-based deep UV light-emitting diode technology
Applications for UV light emitting diodes (LEDs) are discussed and the state-of-the-art in the area of InAlGaN UV LED technology is being reviewed.
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InAlGaN optical emitters: laser diodes with non-epitaxial cladding layers and ultraviolet light-emitting diodes
We describe recent work on nitride lasers and LEDs at PARC.
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In Vivo MRSI of Hyperpolarized [1-13C]Pyruvate Metabolism in Rat Hepatocellular Carcinoma
We implemented a three-dimensional MRSI sequence to investigate this potential hallmark of cellular metabolism in rat livers bearing HCC (n = 7 buffalo rats).
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Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes
The polarization of the in-plane electroluminescence of (0001) orientated (In)(Al)GaN multiple quantum well light emitting diodes in the UV-A and UV-B spectral range has been investigated.
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Optically-pumped lasing of semipolar InGaN/GaN(1122) heterostructures
Results for long-wavelength emitters are presented for growth of semi-polar InGaN/AlGaN/GaN heterostructures on GaN(1122)/m-sapphire templates by metalorganic chemical vapor deposition (MOCVD).
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Nitride laser diodes with non-epitaxial cladding layers
We describe a new laser diode architecture in which the upper cladding layer is replaced with an evaporated or sputtered non-epitaxial material.
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Lasing of semi-polar InGaN/GaN(1122) heterostructures grown on m-plane sapphire substrates
Results for long-wavelength emitters are presented for semi-polar InGaN/AlGaN/GaN heterostructures grown on GaN(1122)/m-sapphire templates by metalorganic chemical vapor deposition.
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Metal-clad nitride semiconductor laser diodes
An edge-emitting laser diode (LD) is described in which the upper epitaxial cladding layer is replaced with an evaporated metal contact selected for its optical as well as electrical properties.
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Community Structure of Archaea in the Water Column Above Gas Hydrates in the Gulf of Mexico
In this study, we presented the 16S rDNA sequences and lipid profiles in the context of water chemistry to characterize the archaeal community structure above a gas hydrate mound (MC 118) in GOM.
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Wafer level packaging with soldered stress engineered micro-springs
Micro springs for integrated circuit test and packaging are demonstrated as soldered flip chip interconnects in a direct die to printed circuit board package.